Symbol Value Units Optical Wavelength λc 1565 nm(+/-20) Output Power (CW) Po 0.225 watts Spectral Width Δλ 10 nm 3dB Emitter Width W 9 μm Emitter Height H 1 μm Temp. Coefficient Δλ/ΔλT 0.55 nm/C Slope Efficiency ηo 0.2 W/A Slow Axis Divg. θ_parallel 8 deg FWHM Fast Axis Divg. θ_perp 8 deg FWHM Number of emitters 1 Duty Cycle DC 100 % Electrical Power Conversion Eff. η 10 Min Threshold Current Ith 0.055 A Operating Current Iop 0.95 A Operating Voltage Vop 2.2 V Series Resistance Rs 1.4 ohm Thermistor - Resistance R 10000 K omh +/-5% Thermistor Constant β 3950 β ± 3% Mechanical Optical Fiber Core Dia. 9 μm Optical Fiber NA NA 0.14 Fiber Length 1 Meters Connector FC Lead Soldering Temp. 250 °C Storage Temp. -40 to 80 °C Weight 88 g Operating Temp. -40 to 60 °C Laser Engine Misc LE X Axis Divergence θ_X 8 deg FWHM LE Y Axis Divergence θ_Y 8 deg FWHM Other Specified values are rated at a constant heat sink temperature of 20oC.
Export license is not required for shipment to the US and most of Europe. For shipments to other countries please click this hyperlink to Regulation Number 6A995.
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Click here to see product information sheet
- Free Space Communications
- Network Test equipment
- High Output Power
- High Dynamic Range
- High Efficiency
- Standard Low Cost Package