Symbol Value Units Optical Wavelength λc 1560 nm(+/-20) Output Power (CW) Po 20 watts Spectral Width Δλ 15 nm 3dB Emitter Width W 400 μm Emitter Height H 1 μm Temp. Coefficient Δλ/ΔλT 0.55 nm/C Slope Efficiency ηo 2.1 W/A Slow Axis Divg. θ_parallel 12 deg FWHM Fast Axis Divg. θ_perp 12 deg FWHM Number of emitters 7 Duty Cycle DC 100 % Electrical Power Conversion Eff. η 19 Min Threshold Current Ith 0.7 A Operating Current Iop 10.5 A Operating Voltage Vop 10.7 V Series Resistance Rs 0.5 ohm Aiming Beam - Current Limit Imax 25 mA Aiming Beam - Operation Limit Vop 2.2 V Aiming Beam - Output Power Pa 2 mW Aiming Beam - Wavelength λa 650 nm Mechanical Optical Fiber Core Dia. 375 μm Optical Fiber NA NA 0.22 Fiber Length 1.5 Meters Lead Soldering Temp. 250 °C Storage Temp. -40 to 80 °C Weight 585 g Operating Temp. -40 to 60 °C Laser Engine Misc LE X Axis Divergence θ_X 12 deg FWHM LE Y Axis Divergence θ_Y 12 deg FWHM Other Specified values are rated at a constant heat sink temperature of 20oC.
Export license is not required for shipment to the US and most of Europe. For shipments to other countries please click this hyperlink to Regulation Number 6A995.
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Click here to see product information sheet
- OEM Medical
- DPSS pump source
- Free Space Communications
- Military / Aerospace
- Thermal Processing
- High Power Multi Chip Laser Assembly
- Fiber Bundle Assembly for low cost
- High Dynamic Range
- High Efficiency
- Red Aiming Beam Optional
- Designed for Volume Applications