- Specification
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Symbol Value Units Optical Wavelength λc 1560 nm(+/-20) Output Power (Pulsed) Po 15 watts Spectral Width Δλ 15 nm 3dB Cavity Length CL 1250 μm Emitter Width W 180 μm Emitter Height H 1 μm Temp. Coefficient Δλ/ΔλT 0.55 nm/C Slope Efficiency ηo 0.4 W/A Slow Axis Divg. θ_parallel 14 deg FWHM Fast Axis Divg. θ_perp 30 deg FWHM Number of emitters 1 Pulse Width PW 150 ns Duty Cycle DC 0.1 % Electrical Power Conversion Eff. η 8 Min Threshold Current Ith 0.8 A Operating Current Iop 35 A Operating Voltage Vop 4.8 V Series Resistance Rs 0.12 ohm Mechanical Lead Soldering Temp. 250 °C Storage Temp. -40 to 80 °C Operating Temp. -40 to 60 °C Laser Engine Misc LE X Axis Divergence θ_X 30 deg FWHM LE Y Axis Divergence θ_Y 14 deg FWHM Other Specified values are rated at a constant heat sink temperature of 20oC.CW As measured on a C-Mount with Indium solder. Export license is not required for shipment to the US and most of Europe. For shipments to other countries please click this hyperlink to Regulation Number 6A995.
- Description
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Details
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Click here to see product information sheet
Applications
- OEM Medical
- Consumer Medical
- Research
- DPSS pump source
- LiDAR
- Military / Aerospace
Features- Cost effective
- High Output Power
- High Dynamic Range
- High Efficiency
- Downloads
High power laser diodes
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