SemiNex Launches High Power Narrow Linewidth External Cavity Laser
SemiNex is excited to announce the launch of the narrow linewidth high power External Cavity Laser (ECL) with single frequency that can achieve >200 mW output power and 10 kHz Lorentzian linewidth in C or O-band. Such high performance is essential to optical networks, FMCW LiDAR, aerospace, and industrial sensing applications.
With SemiNex’ Gain Chip and high power SOA integrated with a Photonic Integrated Circuit (PIC) forming an external cavity, a narrow linewidth and high optical power laser is achieved. Both C & O-band operating wavelength ranges are available, and a custom center wavelength can be requested.
The high power ECL module is constructed in a standard 14-pin butterfly fiber package with exceptional precision and stability for high-performance applications. SemiNex’ high power ECL provides superior wavelength stability, low relative intensity noise (RIN), and excellent side mode suppression ratio (SMSR), making it ideal for precision systems that demand high power and low-noise operations.
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For more information, please contact marketing@seminex.com. |
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About SemiNex Corporation
SemiNex Corporation designs and manufactures proprietary high-power semiconductor infrared laser diode-based assemblies and optical amplifiers for data centers, automotive LiDAR, military, medical, and industrial applications. SemiNex’ products are based on advanced quantum physics and employ high-quality indium phosphide and gallium antimonide materials, supporting wavelengths between 1250 nm to 2400 nm with best-in-class optical output power in addition to superior thermal and electrical efficiencies. SemiNex Corporation also customizes its epitaxial designs and device packaging to meet its customers’ individual requirements.
SemiNex was founded in 2003 and is headquartered in the US.
Contact:
SemiNex Corporation
153 Andover Street, Suite 201
Danvers MA, 01923 USA
+1 978-326-7700
marketing@seminex.com
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