19 Emitter Laser Diode Bar
SemiNex’s High Power Multimode Laser Bars are available at standard wavelengths in the 12xx to 19xx nm region. Production bars have a cavity length of 2.5 or 1.5 mm with 19 emitters and a 500 um pitch. These high power InP laser bars perform best when properly mounted using Indium solder.
Click here to see product information sheet
Wavelength: 1310 nm
Aperture: 95 um
Mode: Multi Mode
Cavity Length: 1500 µm
|Output Power (CW)||Po||watts|
|Spectral Width||Δλ||nm 3dB|
|Slow Axis Divg.||θ_parallel||deg FWHM|
|Fast Axis Divg.||θ_perp||deg FWHM|
|Number of emitters|
|Power Conversion Eff.||η||Min|
|Lead Soldering Temp.||°C|
Specified values are rated at a constant heat sink temperature of 20oC.
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers’ specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Click here to see product information sheet