B-Mount with SemiNex Laser Diode
SemiNex’s B-Mounted Laser Diodes are an excellent choice for customers seeking state-of-art performance in a low cost submount design. These lasers are provided across the InP wavelength range of 12xxnm to 16xxnm and GaSb wavlength range from 19xxnm to 24xxnm and come in a variety of power, wavelength and lensed configurations. Applications for SemiNex’s sub mounted lasers include OEM medical, consumer medical, LiDAR, Military targeting, range finding and illumination. Custom wavelengths and configurations available upon request.
Grin Lens f=274um used to match fast axis divergence to slow axis divergence.
Click here to see product information sheet
Wavelength: 1380 nm
Aperture: 95 um
Mode: Multi Mode
Cavity Length: 2500 µm
Lens Matched f=274um, 5mm Lg
|Output Power (CW)||Po||watts|
|Spectral Width||Δλ||nm 3dB|
|Slow Axis Divg.||θ_parallel||deg FWHM|
|Fast Axis Divg.||θ_perp||deg FWHM|
|Number of emitters|
|Lens Effec. Focal Length||f||μm|
|Included Part Option|
|Power Conversion Eff.||η||Min|
|Lead Soldering Temp.||°C|
Specified values are rated at a constant heat sink temperature of 20oC.
SemiNex delivers the highest available power at infrared wavelengths between 12xxnm and 16xxnm as well 19xxnm to 24xxnm. When necessary we will further optimize the design of our InP or GaSb laser chips to meet our customers’ specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Grin Lens f=274um used to match fast axis divergence to slow axis divergence.Click here to see product information sheet