Chip – Laser diode
SemiNex’s Laser Diodes are an excellent choice for customers seeking state-of-art performance for laser development and customer applications. These laser chips are provided across the InP wavelength range of 12xx to 19xx and come in a variety of power, cavity configurations and wavelength configurations. SemiNex can mount any of its laser die in SemiNex standard packages or SemiNex will work with customers to develop custom packaging Applications for SemiNex’s chips include OEM medical, consumer medical, LiDAR, Military targeting, range finding and illumination. Custom wavelengths and configurations available upon request.
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Wavelength: 1310 nm
Aperture: 30 um
Mode: Multi Mode
Cavity Length: 2500 µm
|Output Power (CW)||Po||watts|
|Spectral Width||Δλ||nm 3dB|
|Slow Axis Divg.||θ_parallel||deg FWHM|
|Fast Axis Divg.||θ_perp||deg FWHM|
|Number of emitters|
|Power Conversion Eff.||η||Min|
|Lead Soldering Temp.||°C|
Specified values are rated at a constant heat sink temperature of 20oC.CW As measured on a C-Mount with Indium solder.
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers’ specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Click here to see product information sheet