Symbol Value Units Optical Wavelength λc 1480 nm(+/-20) Output Power (CW) Po 1.8 watts Spectral Width Δλ 10 nm 3dB Emitter Width W 95 μm Emitter Height H 1 μm Temp. Coefficient Δλ/ΔλT 0.55 nm/C Slope Efficiency ηo 0.3 W/A Slow Axis Divg. θ_parallel 10 deg FWHM Fast Axis Divg. θ_perp 2 deg FWHM Number of emitters 1 Duty Cycle DC 100 % Included Part Option Lens Collimated f=7.7mm Electrical Power Conversion Eff. η 21 Min Threshold Current Ith 0.5 A Operating Current Iop 7 A Operating Voltage Vop 1.4 V Series Resistance Rs 0.1 ohm Mechanical Lead Soldering Temp. 250 °C Storage Temp. -40 to 80 °C Weight 17 g Operating Temp. -40 to 60 °C Laser Engine Misc LE X Axis Divergence θ_X 2 deg FWHM LE Y Axis Divergence θ_Y 10 deg FWHM LE Fan - Air Flow CFM 3 CFM LE Fan - Power watts 0.4 W LE Fan - Voltage VDC 5 VDC Other Specified values are rated at a constant heat sink temperature of 20oC.
Export license is not required for shipment to the US and most of Europe. For shipments to other countries please click this hyperlink to Regulation Number 6A995.
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Fast axis collimated <2 degrees with f=7.7mm lens.Click here to see product information sheet
- OEM Medical
- Consumer Medical
- Range Finding
- Research and Development
- Military / Aerospace
- Cost effective
- High Output Power
- High Dynamic Range
- High Efficiency
- Standard Low Cost Package
- "P" and "Q" Packages Available
- Designed for Volume Applications
- Fast axis collimated <2 degrees with f=7.7mm lens.