- Specification
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Symbol Value Units Optical Wavelength λc 1550 nm(+/-20) Output Power (CW) Po 20 watts Spectral Width Δλ 15 nm 3dB Cavity Length CL 1500 μm Emitter Width W 95 μm Emitter Height H 1 μm Temp. Coefficient Δλ/ΔλT 0.55 nm/C Slope Efficiency ηo 0.3 W/A Slow Axis Divg. θ_parallel 8 deg FWHM Fast Axis Divg. θ_perp 25 deg FWHM Number of emitters 19 Duty Cycle DC 100 % Electrical Power Conversion Eff. η 25 Min Threshold Current Ith 10 A Operating Current Iop 65 A Operating Voltage Vop 1.3 V Series Resistance Rs 0.06 ohm Mechanical Lead Soldering Temp. 250 °C Storage Temp. -40 to 80 °C Weight 1 g Operating Temp. -40 to 60 °C Laser Engine Misc LE X Axis Divergence θ_X 25 deg FWHM LE Y Axis Divergence θ_Y 8 deg FWHM Other Specified values are rated at a constant heat sink temperature of 20oC. Export license is not required for shipment to the US and most of Europe. For shipments to other countries please click this hyperlink to Regulation Number 6A005.
- Description
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Details
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Click here to see product information sheet
Applications
- Medical Laser OEM
- LiDAR
- Free Space Communications
- DPSS Pump Source
- Military / Aerospace
Features- High Power Multi-Mode Laser Bars
- Up to 25 Watts CW power
- 13xx to 16xx Wavelengths Available
- High Dynamic Range
- High Efficiency
- 19 Emitters Standard
- Downloads
High power laser diodes
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