- Specification
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Symbol Value Units Optical Wavelength λc 1270 nm(+/-20) Output Power (CW) Po 5.5 watts Spectral Width Δλ 10 nm 3dB Cavity Length CL 2500 μm Emitter Width W 95 μm Emitter Height H 1 μm Temp. Coefficient Δλ/ΔλT 0.55 nm/C Slope Efficiency ηo 0.45 W/A Slow Axis Divg. θ_parallel 10 deg FWHM Fast Axis Divg. θ_perp 10 deg FWHM Number of emitters 1 Duty Cycle DC 100 % Included Part Option Lens Matched f=274um, 5mm Lg Electrical Power Conversion Eff. η 25 Min Threshold Current Ith 0.5 A Operating Current Iop 12 A Operating Voltage Vop 1.7 V Series Resistance Rs 0.06 ohm Mechanical Lead Soldering Temp. 250 °C Storage Temp. -40 to 80 °C Weight 0.5 g Operating Temp. -40 to 60 °C Laser Engine Misc LE X Axis Divergence θ_X 10 deg FWHM LE Y Axis Divergence θ_Y 10 deg FWHM Other Specified values are rated at a constant heat sink temperature of 20oC. Export license is not required for shipment to the US and most of Europe. For shipments to other countries please click this hyperlink to Regulation Number 6A995.
- Description
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Details
SemiNex delivers the highest available power at infrared wavelengths between 12xx and 19xx nm. When necessary we will further optimize the design of our InP laser chips to meet our customers' specific optical and electrical performance needs. Diodes, bars and packages are tested to meet customer and market performance demands. Typical results and packaging options are shown. Contact SemiNex for additional details or to discuss your specific requirements.Grin Lens f=274um used to match fast axis divergence to slow axis divergence.Click here to see product information sheet
Applications
- OEM Medical
- DPSS pump source
- LiDAR
- Military / Aerospace
Features- Cost effective
- High Output Power
- High Dynamic Range
- High Efficiency
- Standard Low Cost Package
- Fast axis divergence matched to slow axis
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High power laser diodes
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