Welcome to SemiNex

Your Premier Source for Next-Generation Semiconductor Innovations

SemiNex Corporation is an industry-leading manufacturer of high-power semiconductor laser diodes and optical amplifiers, distinguished by our advancements in semiconductor technology. Our proprietary AlInGaAs material system is paired with an innovative curved waveguide design incorporating multiple quantum wells on an InP substrate. Our patented approach allows us to create high-power, narrow linewidth external cavity and comb frequency lasers, redefining industry benchmarks.

Our product portfolio is recognized for its exceptional optical output power, unmatched efficiency, performance across diverse temperature ranges, and adaptable multi-emitter array configurations. These features ensure seamless integration with Si PICs and support diverse, cutting-edge, mission-critical applications. Our dedication to excellence is reflected in our industry accolades for our next-generation semiconductor products, including our state-of-the-art high-power Gain Chips and Reflective Semiconductor Optical Amplifier (RSOA) Arrays.

SemiNex Corporation specializes in crafting customized epitaxial designs and device packaging to cater to the unique requirements of our clients. Our agile scaling for commercial demand and US-based production guarantees sustainability and mitigates supply chain vulnerabilities. We are committed to delivering differentiation and excellence to advance our partners; products and enable them to gain market share.

US-Based Provider

SemiNex is able to scale quickly to high volumes for commercial applications. Being US-based reduces supply chain risks and ensures sustainability.  SemiNex's technologies allow for the highest performance and reliability by design to advance your product performance.

Superior Technology

Hands down. Our indium phosphide-based electronic structures offer superior thermal stability and a wider bandgap compared to GaAs-based structures, resulting in enhanced performance and reliability. Indium phosphide is more stable at elevated temperatures, making it ideal for high-power electronic and optoelectronic devices. The wider bandgap allows for operation at higher frequencies, making it suitable for high-frequency and high-speed applications, such as communication devices and transistors. Additionally, InP-based devices exhibit lower noise levels, improving signal integrity, which is particularly advantageous in communication systems where signal quality is critical.

Customize to Your Requirements

SemiNex Corporation offers its OEM partners custom epitaxial designs and device packaging to meet their unique requirements using high-quality indium phosphide and gallium antimonide materials, supporting wavelengths from 1250 nm to 2400 nm. Devices can also be fiber- coupled and be designed for easy SI PIC integration.

20+ Years Experience

Our high-power semiconductor diode laser modules are renowned for their best-in-class performance in power and efficiency, initially developed for the telecommunications industry. Our devices encompass a wide range, from high-power Fabry-Perot multimode and single-mode laser diodes to DFB laser diodes and semiconductor optical amplifiers, utilizing cutting-edge InP, GaAs, and GaSb material systems.

R&D Investments Drive Innovation

At SemiNex, our passion and expertise are focused on making a positive impact in the world through our products, driving new innovations that allow our customers to imagine their dreams and deliver revolutionary new products. 

Wide Range of Application Optimized Solutions

Collaborate with SemiNex on your next project to push the boundaries and grow your market share. We’re not successful unless you are. Our mission is to create differentiation in your market by leveraging our technologies to give you the best-in-class power and amplification.