Dr. Sidi Aboujja Presents the Latest 1550nm Triple Junction Laser Technology for ToF LiDAR & LRF at Photonics West 2025

Dr. Sidi Aboujja Presents the Latest 1550nm Triple Junction Laser Technology for ToF LiDAR & LRF at Photonics West 2025

SemiNex Corporation is proud to announce that Dr. Sidi Aboujja will be presenting the latest advancements in 1550nm Triple Junction laser technology at Photonics West 2025. His presentation will highlight innovations that significantly enhance the performance and reliability of laser diodes for Time-of-Flight (ToF) LiDAR and laser range finding (LRF) applications.

The technical presentation will focus on SemiNex’s proprietary triple junction laser diodes, engineered using AlInGaAs/InP material systems to achieve superior efficiency and power output. By integrating three monolithic laser structures with tunnel junction layers, this technology minimizes mechanical stress while enhancing thermal dissipation. The result is a diode that delivers three times the output power and twice the wall plug efficiency of a single junction counterpart. Additionally, extensive reliability testing demonstrates exceptional longevity, surpassing automotive industry standards with an estimated mean time to failure (MTTF) of 75,000 hours at 20°C and 17,000 hours at 50°C.

Dr. Aboujja brings over 25 years of expertise in semiconductor laser development to this research. As the Chief Technology Officer of SemiNex, he has played a pivotal role in advancing high-power laser technology. His career includes leadership positions at Excelitas Technologies and PerkinElmer Optoelectronics, along with a strong academic foundation featuring doctoral degrees in optoelectronics and physics from the University of Metz, France, and the University of Sherbrooke, Canada. With multiple design patents and published technical articles to his name, Dr. Aboujja is a recognized authority in next-generation semiconductor laser innovations.

For a deeper dive into this next generation technology, download the full technical paper.

About SemiNex Corporation

SemiNex Corporation designs and manufactures proprietary high-power semiconductor infrared laser diode-based assemblies and optical amplifiers for data centers, automotive LiDAR, military, medical, and industrial applications. SemiNex’ products are based on advanced quantum physics and employ high-quality indium phosphide and gallium antimonide materials, supporting wavelengths between 1250 nm to 2400 nm with best-in-class optical output power in addition to superior thermal and electrical efficiencies. SemiNex Corporation also customizes its epitaxial designs and device packaging to meet its customers’ individual requirements. 

SemiNex was founded in 2003 and is headquartered in the US.

Contact:

SemiNex Corporation

153 Andover Street, Suite 201

Danvers MA, 01923 USA
+1 978-326-7700
marketing@seminex.com

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