Semiconductor optical amplifier (SOA)

Ultra-High Power O-Band SOA Exceeding 1W

SemiNex Corporation, a U.S. leader in high-power infrared semiconductor lasers and optical amplifiers, announces Ultra-High Power O-band SOA (semiconductor optical amplifier) technology that can achieve 30dBm (1 Watt) saturation output power with over 25% Power Conversion Efficiency (PCE) at 50°C. This exciting technology can pave ways for high speed and high data throughput co-packaged optics (CPO) in next-generation Data Center infrastructure and the adoption of optical interconnects for AI, high-performance computing, and FMCW LiDAR applications.

The Ultra-High-Power SOA platform is built on SemiNex' advanced and proprietary epi and optical waveguide structures which allow the maximum output power exceeds 30dBm. Our experienced team can support partners on integration of the Ultra high-power SOA with Si PIC (photonics integrated circuits) for External Laser Small Form Factor Pluggable (ELSFP) of high density photonic engines used in Data Centers.

Ultra High Power Chip on Carriers (COCs)

Optical	Symbol	COC-ENG-703E-10 (Typ.)	COC-ENG-703F-10 (Typ.)	Units
Center Wavelength	λ_c	1310	1310	nm
Output Power @ Iop *	P_out	0.8	1	Watts
Input Aperture Width	AW	4	4	μm
Output Aperture Width	AW	8	12	μm
3dB Bandwidth	BW	80	80	nm
Gain @ Pin = 10μW	G	25	25	dB
Gain Bandwidth	BW	80	80	nm
Beam Exit Angle	θ_EXT	19.5	19.5	degree
Noise Figure	NF	7	7	dB
Polarization Extinction Ratio	PER	18	18	dB
Fast Axis Div. (FWHM)	Θ_┴	38	36	deg FWHM
Slow Axis Div. (FWHM)	Θ_‖	11	9	deg FWHM
Input Facet Reflectivity		<0.1%	<0.1%
Output Face Reflectivity		<0.1%	<0.1%
Waveguide		Tilted Straight	Tilted Straight
Electrical	Symbol			Units
Operating Current	I_op	2.5	2.5	A
Operating Voltage	V_op	1.6	1.6	V
Mechanical	Symbol			Units
Chip Width		700	700	μm
Chip Length		5	5	mm
Operating Temp.**		-20 to 75	-20 to 75	°C
Storage Temp.		-40 to 85	-40 to 85	°C

Ultra High Power 14-Pin Butterfly Packages

Optical	Symbol	14BF-ENG-703-10 (Typ.)	Units
Center Wavelength	λ_c	1310	nm
Output Power @ Iop *	P_out	0.6	Watts
3dB Gain Bandwidth	BW	80	nm
Gain @ Pin = 10μW	G	25	dB
Noise Figure	NF	7	dB
Polarization Extinction Ratio	PER	18	dB
Electrical	Symbol		Units
Operating Current	I_op	3	A
Operating Voltage	V_op	1.6	V
Optical Fiber	Symbol		Units
Fiber Core		9
Fiber Package
Fiber Type		900μm jacket
Connector Type		FC / APC
Fiber Length		1	m
Pinout Type		Type 1
Mechanical		Range	Units
Operating Temp.**		-20 to 75	°C
Storage Temp.		-40 to 85	°C

* Optical output power depends on the seed laser power from 10 to 13 dBm, coupling efficiency, and thermal management.

*Specified values are rated at a constant heat sink temperature of 20°C.

**High temperature operation will reduce performance and MTTF.

Unless otherwise indicated all values are nominal.

Key Benefits of Ultra High Power SOAs

The Ultra-High Power SOA product line delivers exceptional performance for demanding photonics applications, combining ultra-high output power exceeding 30 dBm with a broad gain bandwidth to support flexible system design and wide spectral coverage. Engineered for high efficiency, these devices enable optimized power consumption without sacrificing performance. Available in standard chip-on-carrier formats and arrays, the platform supports scalable integration, including seamless Si PIC integration for advanced photonic architectures. With O-band availability, this product line is well-suited for next-generation optical communication and integrated photonics systems requiring high power, compact footprint, and design versatility.

Applications for Ultra-High Power SOAs span a wide range of industries, including:

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AI Computing & Data Centers

Our state-of-the-art SOAs provide superior performance and enable powerful communications that are retinal safe at long-wavelengths, ensuring private and secure data transmission.

SemiNex SOAs enable 10 to 40kM mobile phone base station and data center communications at the 1310nm wavelength.

SemiNex ensures reliable communication performance, providing you with the confidence in the safety and security of your data during transit.

LiDAR (Light Detection and Ranging)

Power up your FMCW (Frequency Modulation Continuous Wave) LiDAR with SOAs. These amplifiers being particularly invaluable in autonomous vehicle applications.

With SemiNex you can enhance the range of your remote sensing range finders with ease.

Increase ranging up to 250+m, in all weather and direct sunlight conditions, by adding SemiNex' high-powered SOAs to your FMCW (Frequency Modulation Continuous Wave) LiDAR and detect the faintest object at 1310.

Optical Networks

SemiNex Ultra-High Power SOAs are engineered to enable robust, high-speed optical communication across AI computing infrastructure, hyperscale data centers, and long-haul network links.

Operating at long wavelengths such as 1310 nm and 1550 nm, our SOAs support high-output, eye-safe transmission while maintaining signal integrity over extended distances.

With the capability to support communication links ranging from 10 km to 40 km and beyond, they are ideally suited for mobile base stations, data center interconnects, and secure network architectures.

Optical Network and Data Centers >

Optical Time Domain Reflectometer >

ToF LiDAR >

FMCW LiDAR >

Laser Range Finders >

Defense Systems >

Professional Medical Laser Solutions >

Home-use Cosmetics Lasers>

Sensing, 3D Mapping, Wind LiDAR >

Photonics Quantum Computing >

Achieving over 1W with SemiNex Ultra High Power SOAs

Ultra-High Power O-Band SOA Exceeding 1W

Key Benefits of Ultra High Power SOAs

AI Computing & Data Centers

LiDAR (Light Detection and Ranging)

Optical Networks

Test Data for COC-ENG-703X-10

SOA-Based Solutions

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