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Distributed Feedback Lasers

Distributed Feedback Lasers for Ultimate Power and Stability

 

Achieving High-Power with SemiNex Distributed Feedback (DFB) Laser Diodes

 

SemiNex Distributed Feedback (DFB) lasers provide the ultimate in stability and high output power. The integration of a distributed grating on the semiconductor laser chip ensures continuous single-frequency operation as well as exceptional precision, stability and reliability.


Spanning both C-band and O-band wavelengths, SemiNex DFB laser diodes cater to a wide array of applications. These diodes are meticulously designed to enhance detection capabilities in LiDAR systems and extend transmission reach in optical communication networks and data centers. Customizable options for DFB arrays, including multichannel and multi-wavelength configurations are available to meet the specific requirements of advanced projects.

Key Advantages of SemiNex DFB Laser Diodes

  • Exceptional Optical Power: Engineered for high output to meet the most demanding applications     
  • Leading-Edge Performance: Setting industry benchmarks in laser diode technology                           
  • Versatility in Wavelengths: Availability in both C-band and O-band for a wide range of applications   
  • Flexible Packaging Options: Offering submount and butterfly fiber packages for ease of integration  
  • Customizable Arrays: Tailored DFB arrays and multiwavelength configurations available upon request

 

 
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AI Data Centers

High-power CW O-band DFB laser diodes deliver the narrow linewidth and optical stability required for next-generation AI data center interconnects.

 

Designed for co-packaged optics (CPO) and external laser small form factor pluggable (ELSFP) architectures, SemiNex DFB lasers provide reliable light sources that enable scalable silicon photonics platforms and optical networks that scale across high-density compute fabrics.

 

 

Optical Communication

SemiNex state-of-the-art DFB lasers provide superior performance, ensuring long life time and high reliability for ensuring data transmission.

 

We use only the highest quality semiconductors with wavelengths at 1310nm and 1550nm.

The narrow linewidth, high side mode suppression ratio (SMSR), and low relative intensity noise (RIN) of our DFB platform can achieve high quality optical communications. The customizable multi-channel DFB array allows Si PIC integration for low cost and miniaturized transceiver design.  
Data-Centers-Cross-Connect cropped

KEY BENEFITS OF A DFB DIODE LASER

  • High optical power
  • Available in O-band
  • Enables CPO and ELSFP for optical interconnects
  • Multi-channel and multi-wavelength array per request
  • DFB chip, array & CoC

APPLICATIONS OF A DFB DIODE LASER

  • Co-Packaged Optics (CPO)
  • External Laser Small Form Factor Pluggable (ELSFP)
  • AI Data Centers
  • Optical Networks

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Description
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SemiNex DFB Family, Available at 1310nm and 1550nm.

 

Optical

Symbol

Model 1 (typ.)

Model 2 (typ.)

Units

Center Wavelength

λc

1270 – 1350 *

1270 – 1350 *

nm

Output Power @ Iop & 50C

P

>150

>200

mW

Output Power @ Iop & 25C

P

200

250

mW

Linewidth

δf

2

2

MHz

Side Mode Suppression Ratio

SMSR

>50

>50

dB

Relative Intensity Noise

RIN

-145

-145

dB/Hz

Electrical

Symbol

Units

Power Conversion Eff.

η

30

25

%

Operating Voltage

Vop

1.6

1.6

V

Operating Current

Iop

400

600

mA

Threshold Current

ITH

30

30

mA

Mechanical

Symbol

 

 

Units

Operating Temp.

°C

-20 to 75

-20 to 75

°C

Storage Temp.

°C

-40 to 85

-40 to 85

°C

 

*Specified values are rated at a constant heat sink temperature of 20°C.                                                                                                     

Unless otherwise indicated all values are nominal.