SemiNex 2025 Product Releases

In this holiday season, we thank you for your continued support and partnership. Your collaboration has been central to our progress this year, and we look forward to bringing exciting innovation in the year ahead.

As 2025 comes to a close, we are pleased to highlight the several new products introduced this year, each designed to deliver higher optical power, improved efficiency, and enhanced performance for your most demanding applications:

• Short Pulse SOA
  Packaged in a 14-pin butterfly, this SOA provides fast 1 ns rise/fall times, high gain, and strong short-pulse performance for high-speed optical network switching. 
• High Power L-Band SOA
  Centered at 1595 nm, this new SOA expands our high-performance amplifier portfolio into the L-Band. With high gain, broad 3-dB bandwidth, and availability in both single-emitter and array formats.

• 1726 nm High Power Laser Diodes
  Our 3 W CW laser diodes at 1726 nm are optimized for medical applications with a 180 µm aperture. Offered in a variety of submounts and fiber-coupled packages, with a 100 W multi-chip module option is also available.

• 1940 nm 10 W Multi-Chip Module
  The YCMDF-101 delivers 10 W at 1940 nm through a 400 µm, 0.22 NA fiber, offering high efficiency and flexible fiber-attached or fiber-detachable configurations for high-power IR applications.

• Narrow Linewidth <3 kHz External Cavity Laser (ECL)
  Our new ECL combines a SemiNex Gain Chip and high-power SOA with a Photonic Integrated Circuit to deliver <3 kHz Lorentzian linewidth and >200 mW of output power. 
• Wavelength-Swept External Cavity Laser Modules
  Designed for OCT, OFDR, and FMCW LiDAR, these ECL Modules are designed to be turn-key systems, with a built-in driver, controller, and butterfly-packaged ECL in a single system. 

Markets

Optical Communications	Advanced Driver Assistance Systems
Industrial & Quantum	Medical

About SemiNex Corporation

SemiNex Corporation designs and manufactures proprietary high-power semiconductor infrared laser diode-based assemblies and optical amplifiers for data centers, automotive LiDAR, military, medical, and industrial applications. SemiNex’ products are based on advanced quantum physics and employ high-quality indium phosphide and gallium antimonide materials, supporting wavelengths between 1250 nm to 2400 nm with best-in-class optical output power in addition to superior thermal and electrical efficiencies. SemiNex Corporation also customizes its epitaxial designs and device packaging to meet its customers’ individual requirements. 

SemiNex was founded in 2003 and is headquartered in the US.

Contact:

SemiNex Corporation

153 Andover Street, Suite 201

Danvers MA, 01923 USA
+1 978-326-7700
marketing@seminex.com

#higherpower #morephotons