SemiNex’ Ultra-High Power O-band SOA Exceeding 1W

SemiNex Unveils Ultra-High Power O-Band SOA Achieving 1W Output

SemiNex Corporation, a U.S. leader in high-power infrared semiconductor lasers and optical amplifiers, announces Ultra-High Power O-band SOA (semiconductor optical amplifier) technology that can achieve 30dBm (1 Watt) saturation output power with over 20% Power Conversion Efficiency (PCE) at 50°C. This exciting technology can pave ways for high speed and high data throughput co-packaged optics (CPO) in next-generation Data Center infrastructure and the adoption of optical interconnects for AI, high-performance computing, and FMCW LiDAR applications.

The Ultra-High-Power SOA platform is built on SemiNex' advanced and proprietary epi and optical waveguide structures which allow the maximum output power exceeds 30dBm. Our experienced team can support partners on integration of the Ultra high-power SOA with Si PIC (photonics integrated circuits) for External Laser Small Form Factor Pluggable (ELSFP) of high density photonic engines used in Data Centers.

To learn more about the Ultra-High-Power SOA platform, please visit SemiNex at booth # 5011 at SPIE Photonics West 2026 in San Francisco next week. You can also reach out to marketing at marketing@seminex.com for further discussions regarding sampling and technical collaborations.

About SemiNex Corporation
Founded in 2003, SemiNex designs and manufactures high-performance InP semiconductor lasers and optical amplifiers for optical communications, advanced sensing, and defense applications. The company’s patented epitaxial designs, hybrid manufacturing model, and proven supply chain support its expansion into data center and AI infrastructure markets.
#morepower #morephotons

For more information about SemiNex Corporation and its innovative products, please visit https://seminex.com/. SemiNex is headquartered in the US.

Contact:
SemiNex Corporation

153 Andover Street

Danvers MA, 01923 USA

+1 978-326-7700

marketing@seminex.com